Interfacial investigation of in situ oxidation of 4H-SiC

被引：63
|
作者：
Virojanadara, C [1 ]
Johansson, LI [1 ]
机构：
[1] Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden
来源：
SURFACE SCIENCE | 2001年 / 472卷 / 1-2期
关键词：
semi-conductor-insulator interfaces; silicon carbide; oxidation; silicon oxides;
D O I：
10.1016/S0039-6028(00)00967-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
An in situ oxidation study of root3 x root3 R30 degrees reconstructed 4H-SiC(0001) surfaces is reported. An intermediate oxidation state (interpreted to be Si+1) is revealed in core level photoemission spectra recorded from the in situ prepared SiO2/4H-SiC samples. Oxidation was made at a pressure of similar to 10(-3) Torr in flowing oxygen and at substrate temperatures from 600 degreesC to 950 degreesC. The highest oxidation rate was obtained at 800 degreesC when approximate to 25 Angstrom thick SiO2 layers were prepared. The surface related C 1s components observed on the clean reconstructed 4H-SiC(0001) surfaces were found to disappear after oxidation. No carbon or carbon containing by-product at the interface or in the oxide were possible to observe for the films grown. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：L145 / L149
页数：5
相关论文
共 50 条
  • [1] Investigation of Pits Formed at Oxidation on 4H-SiC
    Nakano, Y.
    Nakamura, T.
    Kamisawa, A.
    Takasu, H.
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 377 - 380
  • [2] Oxidation studies of 4H-SiC(0001) and (0001)
    Virojanadara, C
    Johansson, LI
    SURFACE SCIENCE, 2002, 505 (1-3) : 358 - 366
  • [3] In situ analysis of thermal oxidation on H-terminated 4H-SiC surfaces
    Jikimoto, T
    Tsuchida, H
    Kamata, I
    Izumi, K
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 709 - 712
  • [4] Oxidation of porous 4H-SiC substrates
    Soloviev, S
    Das, T
    Sudarshan, TS
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1113 - 1116
  • [5] Oxidation studies of non-polar 4H-SiC surfaces
    Virojanadara, C
    Johansson, LI
    SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 : 1321 - 1324
  • [6] Thermal oxidation temperature dependence of 4H-SiC MOS interface
    Kurimoto, Hirofumi
    Shibata, Kaoru
    Kimura, Chiharu
    Aoki, Hidemitsu
    Sugino, Takashi
    APPLIED SURFACE SCIENCE, 2006, 253 (05) : 2416 - 2420
  • [7] Investigation of anodic oxidation mechanism of 4H-SiC (0001) for electrochemical mechanical polishing
    Yang, Xu
    Sun, Rongyan
    Ohkubo, Yuji
    Kawai, Kentaro
    Arima, Kenta
    Endo, Katsuyoshi
    Yamamura, Kazuya
    ELECTROCHIMICA ACTA, 2018, 271 : 666 - 676
  • [8] A Study on the Isolation Ability of LOCal Oxidation of SiC (LOCOSiC) for 4H-SiC CMOS Process
    Tsui, Bing-Yue
    Tsai, Te-Kai
    Lu, Yen-Ting
    Lin, Jian-Hao
    Hung, Chia-Lung
    Wen, Yu-Xin
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (12) : 6644 - 6647
  • [9] Investigation of the Young's Modulus and the Residual Stress of 4H-SiC Circular Membranes on 4H-SiC Substrates
    Ben Messaoud, Jaweb
    Michaud, Jean-Francois
    Certon, Dominique
    Camarda, Massimo
    Piluso, Nicolo
    Colin, Laurent
    Barcella, Flavien
    Alquier, Daniel
    MICROMACHINES, 2019, 10 (12)
  • [10] Oxidation of 4H-SiC covered with a SmSix surface alloy
    Kildemo, M
    Grossner, U
    Juel, M
    Svensson, BG
    Raaen, S
    SURFACE SCIENCE, 2006, 600 (06) : 1300 - 1307
12345