A route to single-crystalline ZnO films with low residual electron concentration

被引：11

作者：

Liu, J. S. ^{[1
,2
]}

Shan, C. X. ^{[1
]}

Wang, S. P. ^{[1
,2
]}

Sun, F. ^{[1
,2
]}

Yao, B. ^{[1
]}

Shen, D. Z. ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Excited State Proc, Changchun 130033, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 20期

关键词：

X-ray diffraction; Molecular beam epitaxy; Zinc compounds; Semiconducting II-VI materials; EMISSION; DEFECTS; EPITAXY; GROWTH; GAN;

D O I：

10.1016/j.jcrysgro.2010.07.006

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Single-crystalline ZnO films have been grown on a-plane sapphire in plasma assisted molecular beam epitaxy by introducing a high-temperature ZnO buffer layer. The residual electron concentration of the films can be lowered to 1.5 x 10(16) cm(-3), comparable with the best value ever reported for ZnO films grown on a rare and costly substrate of ScAlMgO4. A 3 x 3 reconstruction has been observed on the films grown in this route, which reveals that the films have very smooth surface. X-ray phi-scan spectrum of the films shows six peaks with 60 intervals, and two-dimensional X-ray diffraction datum indicates the single-crystalline nature of the films. Low temperature photoluminescence spectrum of the films shows a dominant free exciton emission and five phonon replicas, confirming the high quality of the films. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2861 / 2864

页数：4

共 21 条

[1] Optically pumped lasing of ZnO at room temperature [J].