Optical properties and bonding behaviors of InSbN alloys grown by metal-organic chemical vapor deposition

被引:11
|
作者
Jin, Y. J. [1 ]
Tang, X. H. [1 ]
Teng, J. H. [2 ]
Zhang, D. H. [1 ]
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 63978, Singapore
[2] ASTAR, IMRE, Singapore 117602, Singapore
基金
新加坡国家研究基金会;
关键词
Characterization; Growth front vapor; MOCVD; Antimonide; Dilute nitride; Semiconducting III-V material; INNXSB1-X;
D O I
10.1016/j.jcrysgro.2015.01.013
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We report optical properties and bonding behavior of nitrogen in InSbN alloys grown by metal-organic chemical vapor deposition (MOCVD) on InSb substrates in different conditions. Energy bandgap reduction is demonstrated in the alloys and the reduced value varies with growth temperature and N/(N+Sb) flux ratio. In addition to In-N bonds which are the main factor for bandgap narrowing, In-N-Sb, N-N and Sb-N bonds also exist in the alloys and they create localized states in the conduction band tail which cause non-Varshni like behavior and lattice mismatch to the InSb substrate. The Sb-N bonds are found to be more abundant than other forms of bonding in the MOCVD grown alloys due likely to the low growth temperature and high Sb/In flux ratio. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:12 / 16
页数:5
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