Resistive switching behavior of Ag/PMMA:Na/Ag devices for memory applications

被引：4

作者：

Tsao, Hou-Yen ^{[1
]}

Wang, Yu-Wu ^{[1
]}

Gao, Zhi-Kui ^{[1
]}

机构：

[1] Natl Changhua Univ Educ, Grad Inst Photon, 1 Jin De Rd, Changhua 500, Taiwan

来源：

THIN SOLID FILMS | 2016年 / 612卷

关键词：

Na particles; Resistive memory devices; Hysteresis effect; SCLC; FIELD-EFFECT TRANSISTORS; LIGHT-EMITTING-DIODES; THIN-FILM; MOBILITY; LAYER;

D O I：

10.1016/j.tsf.2016.05.035

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The fabrication of memory devices based on the Ag/PMMA:Na/Ag structure and their electrical characteristics are reported. The Ag/PMMA:Na/Ag devices show a hysteresis behavior with different Na contents. The most evident hysteresis behavior for memory effect, represented as the on/off current ratio, is found to be as high as 105 in Ag/PMMA:Na-180 s/Ag devices. The carrier conduction mechanisms between the high and low resistance states and the transition states are further examined on the basis of trap-assisted space charge limited current theory. Such devices sustain at least 60 operation iterations and 100 s duration tests. Hence, the idea of incorporating Na particles into the organic layer of memory devices creates a promising direction for the development of organic memory devices. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：61 / 65

页数：5

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