Atomic Layer Deposition Enabled Perovskite/PEDOT Solar Cells in a Regular n-i-p Architectural Design

被引：44

作者：

Koushik, Dibyashree ^{[1
]}

Verhees, Wiljan J. H. ^{[2
]}

Zhang, Dong ^{[2
]}

Kuang, Yinghuan ^{[1
]}

Veenstra, Sjoerd ^{[2
]}

Creatore, Mariadriana ^{[1
,2
]}

Schropp, Ruud E. I. ^{[1
,2
]}

机构：

[1] Eindhoven Univ Technol TU E, Dept Appl Phys, Plasma & Mat Proc, NL-5600 MB Eindhoven, Netherlands

[2] ECN Solliance, High Tech Campus 21, NL-5656 AE Eindhoven, Netherlands

来源：

ADVANCED MATERIALS INTERFACES | 2017年 / 4卷 / 18期

关键词：

HOLE EXTRACTION LAYERS; INDIUM-TIN-OXIDE; CONJUGATED POLYMER; DIFFUSION LENGTHS; THIN-FILMS; EFFICIENT; PERFORMANCE; PHOTOVOLTAICS; ELECTRODES; STABILITY;

D O I：

10.1002/admi.201700043

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Perovskite solar cells employing poly(3,4-ethylenedioxythiophene) (PEDOT) as hole transport layer on top of methylammonium lead halide are reported, yielding a power conversion efficiency of 11% and a 6% stabilized power output. An atomic layer deposition assisted interface architectural approach is adopted to fabricate the n-i-p perovskite/PEDOT devices. The results present a promising next step toward efficient low-cost perovskite-based photovoltaic technology.

引用

页数：7

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