Growth of Single Crystals of Semiconductor Solid Solutions by Double Feeding of the Melt Method

被引：7
|
作者：
Azhdarov, G. Kh. [1 ]
Zeynalov, Z. M. [2 ]
Agamaliyev, Z. A. [1 ]
Kyazimova, A. I. [2 ]
机构：
[1] Natl Acad Sci Azerbaijan, Inst Phys, Baku, Azerbaijan
[2] Ganja State Univ, Ganja, Azerbaijan
来源：
CRYSTALLOGRAPHY REPORTS | 2010年 / 55卷 / 04期
关键词：
CZOCHRALSKI GROWTH; SI;
D O I：
10.1134/S1063774510040309
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The problem of component distribution in solid solution crystals grown from a melt fed by rods made of the components of the system, with allowance for the dependence of their segregation coefficients on the melt composition, has been solved in the Pfann approximation. Examples determining the conditions for growing homogeneous single crystals of solid solutions with a specified composition and obtaining (in a unified cycle) crystals composed of several uniform parts of different compositions are presented for the Si-Ge system. The good prospects of using the method of double feeding the melt for growing single crystals of semiconductor solid solutions with specified graded and/or uniform compositions are shown.
引用
收藏
页码：716 / 719
页数：4
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