Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors

被引：17

作者：

Chu, RM ^{[1
]}

Zheng, YD ^{[1
]}

Zhou, YG ^{[1
]}

Gu, SL ^{[1
]}

Shen, B ^{[1
]}

Zhang, R ^{[1
]}

Jiang, RL ^{[1
]}

Han, P ^{[1
]}

Shi, Y ^{[1
]}

机构：

[1] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2003年 / 77卷 / 05期

关键词：

D O I：

10.1007/s00339-002-1760-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this letter, we investigate the carrier features in AlGaN/InGaN/GaN heterostructure field-effect transistors. A study of charge control in the AlGaN/InGaN/GaN structure is performed by self-consistently solving Schrodinger's equation in conjunction with Poisson's equation. The results indicate that the concentration of two-dimensional electron gas can be largely increased with the incorporation of an InGaN layer. Both carrier density and quantum confinement are very sensitive to the strain in the InGaN channel layer. These novel features are attributed to the strong polarization effect in the AlGaN/InGaN and InGaN/GaN interfaces.

引用

页码：669 / 671

页数：3

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