Electrical properties and energy-storage performance of (Pb0.92Ba0.05La0.02)(Zr0.68Sn0.27Ti0.05)O3 antiferroelectric thick films prepared by tape-casing method

The energy-storage performance and dielectric properties of tape-cast (Pb0.92Ba0.05La0.02)(Zr0.68Sn0.27Ti0.05)O-3 (PBLZST) antiferroelectric (AFE) thick films with different thicknesses were systematically studied. As the thickness of the thick films increased from 40 to 80 pm, the dielectric constant and saturation polarization (P-s) of the thick films were gradually increased, while their corresponding breakdown strength (BDS) was decreased. A maximum recoverable energy-storage density of 6.8 J/cm(3), companied by an efficiency of 61.2%, was achieved in the PBLZST AFE thick film with a thickness of 40 pm at room temperature. Moreover, the energy density of the PBLZST AFE thick films also displayed good thermal stability over 25-200 degrees C. In addition, all the samples had a low leakage current density of similar to 10(-6) A/cm(2) at room temperature. These findings demonstrated that the PBLZST thick films should be a promising candidate for applications in high energy-storage capacitors. (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.