Densified SiOF film formation for preventing water absorption

被引:50
作者
Kudo, H [1 ]
Shinohara, R [1 ]
Takeishi, S [1 ]
Awaji, N [1 ]
Yamada, M [1 ]
机构
[1] FUJITSU LABS LTD, ELECTRON DEVICES & MAT LAB, ATSUGI, KANAGAWA 24301, JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1996年 / 35卷 / 2B期
关键词
SiOF; PE-CVD; dielectric constant; water absorption; interlayer dielectric;
D O I
10.1143/JJAP.35.1583
中图分类号
O59 [应用物理学];
学科分类号
摘要
We confirmed that the density of a SiOF film was decreased by the addition of C2F6 as a fluorine source. Such a decrease in the density had the most significant effect on the water absorptivity. Densities of the films were controlled by increasing O-2 gas mixture ratios. From the TDS measurements of water desorption and the change in dielectric constants which occurred when the Blm was exposed to atmosphere, we confirmed that the densified films had lower water absorptivity.
引用
收藏
页码:1583 / 1587
页数:5
相关论文
共 20 条
  • [1] HIGH-ACCURACY X-RAY REFLECTIVITY STUDY OF NATIVE-OXIDE FORMED IN CHEMICAL TREATMENT
    AWAJI, N
    SUGITA, Y
    OHKUBO, S
    NAKANISHI, T
    TAKASAKI, K
    KOMIYA, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (8A): : L1013 - L1016
  • [2] Fukada T., 1993, 1993 INT C SOL STAT, P158
  • [3] HAYASAKA N, 1995, 1995 INT C SOL STAT, P157
  • [4] THERMAL-DESORPTION AND INFRARED STUDIES OF PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED SIO FILMS WITH TETRAETHYLORTHOSILICATE
    HIRASHITA, N
    TOKITOH, S
    UCHIDA, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (04): : 1787 - 1793
  • [5] NEW DIFFRACTOMETER FOR THIN-FILM STRUCTURE-ANALYSIS UNDER GRAZING-INCIDENCE CONDITION
    HORII, Y
    TOMITA, H
    KOMIYA, S
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1995, 66 (02) : 1370 - 1372
  • [6] KANETA C, 1995, 56 AUT M JAP SOC APP
  • [7] KUDO H, 1995, 1995 INT C SOL STAT, P605
  • [8] LIM SW, 1995, 1995 INT C SOL STAT, P163
  • [9] IR SPECTROSCOPIC INVESTIGATION OF SIO2 FILM STRUCTURE
    LISOVSKII, IP
    LITOVCHENKO, VG
    LOZINSKII, VG
    STEBLOVSKII, GI
    [J]. THIN SOLID FILMS, 1992, 213 (02) : 164 - 169
  • [10] MACHIDA K, 1993, P VLSI C, P103