Fermi surface evolution through a heavy-fermion superconductor-to-antiferromagnet transition: de Haas-van Alphen effect in Cd-substituted CeCoIn5

被引：14

作者：

Capan, C. ^{[1
]}

Jo, Y. -J. ^{[2
]}

Balicas, L. ^{[2
]}

Goodrich, R. G. ^{[3
]}

DiTusa, J. F. ^{[3
]}

Vekhter, I. ^{[3
]}

Murphy, T. P. ^{[2
]}

Bianchi, A. D. ^{[1
]}

Pham, L. D. ^{[1
,5
]}

Cho, J. Y. ^{[4
]}

Chan, J. Y. ^{[4
]}

Young, D. P. ^{[3
]}

Fisk, Z. ^{[1
]}

机构：

[1] Univ Calif Irvine, Dept Phys & Astron, Irvine, CA 92697 USA

[2] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32310 USA

[3] Louisiana State Univ, Dept Phys & Astron, Baton Rouge, LA 70803 USA

[4] Louisiana State Univ, Dept Chem, Baton Rouge, LA 70803 USA

[5] Intel Corp, Santa Clara, CA 95051 USA

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 03期

基金：

美国国家科学基金会;

关键词：

QUANTUM-CRITICAL-POINT; KONDO-LATTICE; PRESSURE; LIQUID; ELECTRON; BEHAVIOR; CERHIN5;

D O I：

10.1103/PhysRevB.82.035112

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the results of de-Haas-van-Alphen (dHvA) measurements in CeCoIn5 and LaCoIn5. Cd doping is known to induce an antiferromagnetic order in the heavy-fermion superconductor CeCoIn5, whose effect can be reversed with applied pressure. We find a slight but systematic change of the dHvA frequencies with Cd doping in both compounds, reflecting the chemical potential shift due to the addition of holes. The frequencies and effective masses are close to those found in the nominally pure compounds with similar changes apparent in the Ce and La compounds with Cd substitution. We observe no abrupt change to the electron Fermi surface volume in the high field paramagnetic state for x similar to x(c) corresponding to the onset of antiferromagnetic ordering at H = 0 in CeCo (In1-xCdx)(5). Our results make it unlikely that a change of Fermi surface from large to small accompanies the change in the ground state meaning that the Fermi surface of CeCoIn5 doped with Cd likely includes a significant contribution from Ce f electrons even for x > x(c).

引用

页数：11