A moire theory for probing grain boundary structure in graphene

被引:5
作者
Annevelink, Emil [1 ]
Wang, Zhu-Jun [2 ,3 ]
Dong, Guocai [4 ,5 ]
Johnson, Harley T. [1 ,6 ]
Pochet, Pascal [7 ,8 ]
机构
[1] Univ Illinois, Dept Mech Sci & Engn, Urbana, IL 61801 USA
[2] Swiss Fed Inst Technol, Sci Ctr Opt & Electron Microscopy, Otto Stern Weg 3, CH-8093 Zurich, Switzerland
[3] Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
[4] Leiden Univ, Kamerlingh Onnes Lab, POB 9504, NL-2300 RA Leiden, Netherlands
[5] GC Innovat Co Ltd, 8 Lanxiang Rd, Changzhou, Jiangsu, Peoples R China
[6] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
[7] Univ Grenoble Alpes, Dept Phys, IRIG, F-38000 Grenoble, France
[8] CEA, F-38000 Grenoble, France
关键词
Graphene growth; Grain boundary; Coalescence; Moire metrology; In-operando STM; REACTIVE FORCE-FIELD; SINGLE-CRYSTAL GRAPHENE; VAPOR-DEPOSITION GROWTH; MIGRATION; REAXFF; OXYGEN; DEFECTS; FILMS;
D O I
10.1016/j.actamat.2021.117156
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Multiscale microscopy spanning the atomistic, moire, and meso scales has enabled engineering the equilibrium structure of graphene. However, temporal restrictions on in-operando imaging techniques make the moirescale the finest accessible spatial resolution, thereby limiting our understanding of atomistic mechanisms of non-equilibrium processes in graphene. In order to include atomic scale features with in-operando microscopy, we develop a moiremetrology theory that infers the atomic scale structure from the moirescale, creating a bridge to in-operando microscopy. The theory is based on atomic scale models that govern the atomistic structure and are promoted to the moirescale by simulation. We introduce this through a relevant application: nuclei coalescence of graphene during chemical vapor deposition. We develop two mechanistic atomic scale models that govern the propagation and structure of grain boundaries, illuminating how edge dislocations, disconnections, and grain boundaries form from the attachment of individual dimers. The atomistic models are brought to the moirescale through bond convolution simulations and the resultant moiremetrology theory is tested on results from in-operando scanning tunneling microscopy. By showing that we can identify atomic scale defects from moire patterns, we highlight how moiremetrology can enable decision making during growth from in-operando observation of graphene structure, paving the way for the design of graphene atomistic structure under scalable synthesis conditions. (C) 2021 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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页数:11
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