Effect of the spraying temperatures and the sulfurization on the properties of the absorber Cu2FeSnS4 thin films in a solar cell

被引：19
作者：
El Fidha, G. [1 ]
Bitri, N. [1 ]
Mahjoubi, S. [1 ]
Abaab, M. [1 ]
Ly, I. [2 ]
机构：
[1] Univ Tunis El Manar, Ecole Natl Ingn Tunis, Lab Photovolta & Mat Semicond, Tunis 1002, Tunisia
[2] Univ Bordeaux 1, Ctr Rech Paul Pascal, Bordeaux, France
来源：
MATERIALS LETTERS | 2018年 / 215卷
关键词：
Cu2FeSnS4; Thin films; Solar cells; Spray; DRX; Raman; MEB; DIFFRACTION; PRECURSORS; CU2ZNSNS4; SPECTRUM;
D O I：
10.1016/j.matlet.2017.12.063
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The quaternary Cu2FeSnS4 (CFTS) is regarded like the one of the semiconductors promoting as an effective photovoltaic absorber because of their earth-abundant and non-toxic elements. The thin films were elaborated by spray pyrolysis method deposited onto glass substrates at 370 degrees C for one hour with post-sulfurization treatment at 450 degrees C for 30 min. XRD spectra analysis showed that the CFTS thin films have tetragonal structure with a main peak corresponding to the direction (1 1 2). The Raman spectrum confirmed these results with an appearance of two main peaks corresponding to the CFTS situated at the positions 289 cm(-1) and 318 cm(-1). The CFTS films exhibit a homogeneous, rough and dense topography with a thickness of about 0.8 mu m. The films of CFTS present a high absorption coefficient (>= 10(5) cm(-1)) and the direct band gap energy is found to be 1.55 eV, which confirms their use as an absorber for solar cells. (C) 2017 Elsevier B.V. All rights reserved.
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收藏
页码：62 / 64
页数：3
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