Tunnel magnetoresistance in full-epitaxial magnetic tunnel junctions with a top electrode consisting of a perpendicularly magnetized D022-Mn3Ge film

被引:9
作者
Sugihara, Atsushi [1 ]
Suzuki, Kazuya [1 ]
Miyazaki, Terunobu [1 ]
Mizukami, Shigemi [1 ]
机构
[1] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan
关键词
ANISOTROPY;
D O I
10.7567/JJAP.54.078002
中图分类号
O59 [应用物理学];
学科分类号
摘要
We grew a magnetic tunnel junction (MTJ) with a top electrode consisting of a Mn3Ge film using a thin Co-Fe alloy film as a seed layer. X-ray diffraction showed that the Mn3Ge had (001)-oriented D0(22) structure epitaxially grown on an MgO(001) substrate. Magnetic hysteresis loops suggested that the D0(22)-Mn3Ge film possessed perpendicular magnetic anisotropy. A magnetoresistance (MR) ratio of 11.3% was observed in the microfabricated MTJ at room temperature. The resistance-field curve suggested that the top-Co-Fe and D0(22)-Mn3Ge layer are weakly coupled antiferromagnetically. The optimization of top-Co-Fe composition would improve MR ratio. (C) 2015 The Japan Society of Applied Physics
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页数:3
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