All Graphene-Based Thin Film Transistors on Flexible Plastic Substrates

被引：205

作者：

Lee, Seoung-Ki ^{[1
,2
,3
]}

Jang, Ho Young ^{[4
,5
]}

Jang, Sukjae ^{[1
,2
,3
]}

Choi, Euiyoung ^{[1
]}

Hong, Byung Hee ^{[6
]}

Lee, Jaichan ^{[1
]}

Park, Sungho ^{[4
,5
]}

Ahn, Jong-Hyun ^{[1
,2
,3
]}

机构：

[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea

[3] Sungkyunkwan Univ, Ctr Human Interface Nano Technol HINT, Suwon 440746, South Korea

[4] Sungkyunkwan Univ, Dept Chem, Suwon 440746, South Korea

[5] Sungkyunkwan Univ, Dept Energy Sci, Suwon 440746, South Korea

[6] Seoul Natl Univ, Dept Chem, Seoul 151747, South Korea

来源：

NANO LETTERS | 2012年 / 12卷 / 07期

基金：

新加坡国家研究基金会;

关键词：

Graphene; graphene oxide; flexible electronics; thin film transistor; OXIDE; TRANSPARENT; HYSTERESIS; REDUCTION; STRENGTH; WATER;

D O I：

10.1021/nl300948c

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High-performance, flexible all graphene-based thin film transistor (TFT) was fabricated on plastic substrates using a graphene active layer, graphene oxide (GO) dielectrics, and graphene electrodes. The GC) dielectrics exhibit a dielectric constant (3.1 at 77 K), low leakage current (17 mA/cm(2)), breakdown bias (1.5 x 10(6) V/cm), and good mechanical flexibility. Graphene-based TFTs showed a hole and electron mobility of 300 and 250 cm(2)/(V.s), respectively, at a drain bias of -0.1 V. Moreover, graphene TFTs on the plastic substrates exhibited remarkably good mechanical flexibility and optical transmittance. This method explores a significant step for the application of graphene toward flexible and stretchable electronics.

引用

页码：3472 / 3476

页数：5

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