Post-Treatment-Free Solution-Processed Reduced Phosphomolybdic Acid Containing Molybdenum Oxide Units for Efficient Hole-Injection Layers in Organic Light-Emitting Devices

被引:15
作者
Ohisa, Satoru [1 ,2 ,3 ]
Endo, Kohei [1 ]
Kasuga, Kosuke [1 ]
Suzuki, Michinori [1 ]
Chiba, Takayuki [1 ,2 ,3 ]
Pu, Yong-Jin [1 ,2 ,3 ]
Kido, Junji [1 ,2 ,3 ]
机构
[1] Yamagata Univ, Dept Organ Mat Sci, 4-3-16 Jonan, Yonezawa, Yamagata 9928510, Japan
[2] Yamagata Univ, Res Ctr Organ Elect, 4-3-16 Jonan, Yonezawa, Yamagata 9928510, Japan
[3] Yamagata Univ, Frontier Ctr Organ Mat, 4-3-16 Jonan, Yonezawa, Yamagata 9928510, Japan
基金
日本科学技术振兴机构;
关键词
LOW-TEMPERATURE; TRANSPORT LAYERS; SOLAR-CELLS; DIODES; ELECTRONICS; BUFFER; HYDROGEN; FILMS;
D O I
10.1021/acs.inorgchem.7b02842
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
We report the development of solution-processed reduced phosphomolybdic acid (rPMA) containing molybdenum oxide units for post-treatment-free hole-injection layers (HILs) in organic light-emitting devices (OLEDs). The physical and chemical properties of rPMA, including its structure, solubility in several solvents, film surface roughness, work function, and valence states, were investigated. The formation of gap states just below the Fermi level of rPMA was observed. Without any post-treatment after the formation of rPMA films, OLEDs employing rPMA as an HIL exhibited a very low driving voltage and a high luminous efficiency. The low driving voltage was attributed to the energy level alignment between the gap states formed by reduction and the HOMO level of the hole-transport layer material N,N'-bis(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine.
引用
收藏
页码:1950 / 1957
页数:8
相关论文
共 33 条
[1]   Transition Metal Oxide Work Functions: The Influence of Cation Oxidation State and Oxygen Vacancies [J].
Greiner, Mark T. ;
Chai, Lily ;
Helander, Michael G. ;
Tang, Wing-Man ;
Lu, Zheng-Hong .
ADVANCED FUNCTIONAL MATERIALS, 2012, 22 (21) :4557-4568
[2]   Low-temperature, solution-processed molybdenum oxide hole-collection layer for organic photovoltaics [J].
Hammond, Scott R. ;
Meyer, Jens ;
Widjonarko, N. Edwin ;
Ndione, Paul F. ;
Sigdel, Ajaya K. ;
Garcia, Andres ;
Miedaner, Alexander ;
Lloyd, Matthew T. ;
Kahn, Antoine ;
Ginley, David S. ;
Berry, Joseph J. ;
Olson, Dana C. .
JOURNAL OF MATERIALS CHEMISTRY, 2012, 22 (07) :3249-3254
[3]   Stable solution processed hole injection material for organic light-emitting diodes [J].
Ho, Szuheng ;
Xiang, Chaoyu ;
Liu, Rui ;
Chopra, Neetu ;
Mathai, Mathew ;
So, Franky .
ORGANIC ELECTRONICS, 2014, 15 (10) :2513-2517
[4]   Tungsten Oxide Buffer Layers Fabricated in an Inert Sol-Gel Process at Room-Temperature for Blue Organic Light-Emitting Diodes [J].
Hoefle, Stefan ;
Bruns, Michael ;
Straessle, Stefan ;
Feldmann, Claus ;
Lemmer, Uli ;
Colsmann, Alexander .
ADVANCED MATERIALS, 2013, 25 (30) :4113-4116
[5]   Post-treatment-Free Solution-Processed Non-stoichiometric NiOx Nanoparticles for Efficient Hole-Transport Layers of Organic Optoelectronic Devices [J].
Jiang, Fei ;
Choy, Wallace C. H. ;
Li, Xinchen ;
Zhang, Di ;
Cheng, Jiaqi .
ADVANCED MATERIALS, 2015, 27 (18) :2930-+
[6]   Low-Temperature Chemical Transformations for High-Performance Solution-Processed Oxide Transistors [J].
John, Rohit Abraham ;
Chien, Nguyen Anh ;
Shukla, Sudhanshu ;
Tiwari, Naveen ;
Shi, Chen ;
Ing, Ng Geok ;
Mathews, Nripan .
CHEMISTRY OF MATERIALS, 2016, 28 (22) :8305-8313
[7]   Electronic structure of anode interface with molybdenum oxide buffer layer [J].
Kanai, Kaname ;
Koizumi, Kenji ;
Ouchi, Satoru ;
Tsukamoto, Yoshiaki ;
Sakanoue, Kei ;
Ouchi, Yukio ;
Seki, Kazuhiko .
ORGANIC ELECTRONICS, 2010, 11 (02) :188-194
[8]  
Kolesov VA, 2017, NAT MATER, V16, P474, DOI [10.1038/NMAT4818, 10.1038/nmat4818]
[9]   Role of the deep-lying electronic states of MoO3 in the enhancement of hole-injection in organic thin films [J].
Kroeger, M. ;
Hamwi, S. ;
Meyer, J. ;
Riedl, T. ;
Kowalsky, W. ;
Kahn, A. .
APPLIED PHYSICS LETTERS, 2009, 95 (12)
[10]   Hole injection enhancement of a single-walled carbon nanotube anode using an organic charge-generation layer [J].
Lee, Hyunbok ;
Lee, Jeihyun ;
Park, Soohyung ;
Yi, Yeonjin ;
Cho, Sang Wan ;
Kim, Jeong Won ;
Kang, Seong Jun .
CARBON, 2014, 71 :268-275