Catalyst Incorporation at Defects during Nanowire Growth

被引:51
作者
Hemesath, Eric R. [1 ]
Schreiber, Daniel K. [1 ]
Gulsoy, Emine B. [1 ]
Kisielowski, Christian F. [2 ]
Petford-Long, Amanda K. [1 ,3 ]
Voorhees, Peter W. [1 ]
Lauhon, Lincoln J. [1 ]
机构
[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Natl Ctr Electron Microscopy, Berkeley, CA 94720 USA
[3] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA
基金
美国国家科学基金会;
关键词
Nanowire; TEM; grain boundary; impurity; tomography; crystal growth; DOPANT SEGREGATION; GRAIN-BOUNDARIES; SILICON; SUPERLATTICES; BORON;
D O I
10.1021/nl203259f
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Scanning and transmission electron microscopy was used to correlate the structure of planar defects with the prevalence of Au catalyst atom incorporation in Si nanowires. Site-specific high-resolution imaging along orthogonal zone axes, enabled by advances in focused ion beam cross sectioning, reveals substantial incorporation of catalyst atoms at grain boundaries in < 110 > oriented nanowires. In contrast, (111) stacking faults that generate new polytypes in < 112 > oriented nanowires do not show preferential catalyst incorporation. Tomographic reconstruction of the catalyst-nanowire interface is used to suggest criteria for the stability of planar defects that trap impurity atoms in catalyst-mediated nanowires.
引用
收藏
页码:167 / 171
页数:5
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