Photoelectron emission from heavily B-doped homoepitaxial diamond films

被引：3
|
作者：
Takeuchi, D. [1 ]
Tokuda, N. [1 ]
Ogura, M. [1 ]
Yamasaki, S. [1 ,2 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Nanotechnol Res Inst, Tsukuba, Ibaraki 3058568, Japan
[2] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058577, Japan
来源：
DIAMOND AND RELATED MATERIALS | 2008年 / 17卷 / 4-5期
关键词：
energy band; boron; photoemission yield spectroscopy; negative electron affinity;
D O I：
10.1016/j.diamond.2007.12.054
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We discuss the energy band structure near the valence band maximum based on photoemission yield spectroscopy experiments using a hydrogen-terminated heavily boron-doped homoepitaxial diamond film with concentration of 3 x 10(20) cm(-3). The experimental results showed a metallic photoemission behavior with a negative electron affinity surface. Based on the fitting as metallic photoemission behavior with a Fowler plot, the Fermi level should be at 5.35 eV below the conduction band minimum, which means that the Fermi level lies at 0.12 eV (5.47-5.35 eV) above the valence band maximum. Thus the film shows metallic conduction by the Mott transition, but not as degenerate semiconductor. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：813 / 816
页数：4
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