Photoelectron emission from heavily B-doped homoepitaxial diamond films

被引：3
|
作者：
Takeuchi, D. [1 ]
Tokuda, N. [1 ]
Ogura, M. [1 ]
Yamasaki, S. [1 ,2 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Nanotechnol Res Inst, Tsukuba, Ibaraki 3058568, Japan
[2] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058577, Japan
来源：
DIAMOND AND RELATED MATERIALS | 2008年 / 17卷 / 4-5期
关键词：
energy band; boron; photoemission yield spectroscopy; negative electron affinity;
D O I：
10.1016/j.diamond.2007.12.054
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We discuss the energy band structure near the valence band maximum based on photoemission yield spectroscopy experiments using a hydrogen-terminated heavily boron-doped homoepitaxial diamond film with concentration of 3 x 10(20) cm(-3). The experimental results showed a metallic photoemission behavior with a negative electron affinity surface. Based on the fitting as metallic photoemission behavior with a Fowler plot, the Fermi level should be at 5.35 eV below the conduction band minimum, which means that the Fermi level lies at 0.12 eV (5.47-5.35 eV) above the valence band maximum. Thus the film shows metallic conduction by the Mott transition, but not as degenerate semiconductor. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：813 / 816
页数：4
相关论文
共 50 条
  • [1] Superconductivity in heavily B-doped diamond layers deposited on highly oriented diamond films
    Muranaka, Takahiro
    Kobashi, Koji
    Okabe, Hirotaka
    Tachibana, Takeshi
    Yokota, Yoshihiro
    Hayashi, Kazushi
    Kawakami, Nobuyuki
    Akimitsu, Jun
    DIAMOND AND RELATED MATERIALS, 2011, 20 (09) : 1273 - 1281
  • [2] Photoelectron spectroscopy of ion-irradiated B-doped CVD diamond surfaces
    Francz, G
    Reinke, P
    Oelhafen, P
    Hanni, W
    THIN SOLID FILMS, 1995, 270 (1-2) : 200 - 204
  • [3] Extended defects and precipitation in heavily B-doped silicon
    Cojocaru-Miredin, O.
    Cristiano, F.
    Fazzini, P. -F.
    Mangelinck, D.
    Blavette, D.
    THIN SOLID FILMS, 2013, 534 : 62 - 66
  • [4] Doping-induced strain in heavily B-doped (100) diamond films prepared by hot-filament chemical vapor deposition
    Ohmagari, Shinya
    Yamada, Hideaki
    Umezawa, Hitoshi
    Chayahara, Akiyoshi
    Mokuno, Yoshiaki
    THIN SOLID FILMS, 2019, 680 : 85 - 88
  • [5] Characterization of B-doped polycrystalline diamond films using thermally stimulated luminescence
    Benabdesselam, M.
    Iacconi, P.
    Wrobel, F.
    Petitfils, A.
    Butler, J. E.
    DIAMOND AND RELATED MATERIALS, 2007, 16 (4-7) : 805 - 808
  • [6] Doping-induced changes in the valence band edge structure of homoepitaxial B-doped diamond films below Mott's critical density
    Takeuchi, D.
    Ogura, M.
    Tokuda, N.
    Okushi, H.
    Yamasaki, S.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (09): : 1991 - 1995
  • [7] Structural characterization of B-doped diamond nanoindentation tips
    Sprouster, David J.
    Ruffell, Simon
    Bradby, Jodie E.
    Williams, James S.
    Lockrey, Mark N.
    Phillips, Matthew R.
    Major, Ryan C.
    Warren, Oden L.
    JOURNAL OF MATERIALS RESEARCH, 2011, 26 (24) : 3051 - 3057
  • [8] Photoelectron emission from lithiated diamond
    O'Donnell, Kane M.
    Martin, Tomas L.
    Edmonds, Mark T.
    Tadich, Anton
    Thomsen, Lars
    Ristein, Juergen
    Pakes, Christopher I.
    Fox, Neil A.
    Ley, Lothar
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2014, 211 (10): : 2209 - 2222
  • [9] Correlation between Plasma OES and Properties of B-doped Diamond Films Grown by MW PE CVD
    Belousov, M. E.
    Krivchenko, V. A.
    Minakov, P. V.
    Pal', A. F.
    Rakhimov, A. T.
    Suetin, N. V.
    Sen', V. V.
    EUROCVD 17 / CVD 17, 2009, 25 (08): : 257 - 263
  • [10] Effects of annealing temperature on the microstructure and p-type conduction of B-doped nanocrystalline diamond films
    Gu Shan-Shan
    Hu Xiao-Jun
    Huang Kai
    ACTA PHYSICA SINICA, 2013, 62 (11)
12345