Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes

被引：34

作者：

Boucherit, M. ^{[1
]}

Soltani, A. ^{[1
]}

Monroy, E. ^{[2
]}

Rousseau, M. ^{[1
]}

Deresmes, D. ^{[1
]}

Berthe, M. ^{[1
]}

Durand, C. ^{[1
]}

De Jaeger, J. -C. ^{[1
]}

机构：

[1] PRES Univ Lille Nord France, Univ Lille1, IEMN UMR CNRS 8520, Lille, France

[2] CEA Grenoble, DRFMC PSC SP2M, Equipe Mixte CEA CNRS UJF Nanophys & Semicond, Grenoble, France

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 18期

关键词：

OSCILLATIONS; ALGAN; GHZ;

D O I：

10.1063/1.3659468

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlN/GaN double-barrier resonant tunnelling diodes were grown by molecular beam epitaxy on GaN/sapphire template and processed into mesa diameters from 2 mu m to 4 mu m. The current-voltage characteristics were carried out in direct current operation and under-high vacuum. A sharp negative differential resistance (NDR) was detected in the forward bias at 120 K. The NDR was observed for the mesa size of 2 mu m at 4V with a peak-to-valley current ratio of 3.5. The measurement conditions were chosen to make NDR reproducible more than 50 times and apparent in both scan voltage directions after electrical treatment. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3659468]

引用

页数：3

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