Chip Last Fan-out Packaging for Millimeter Wave Application

被引:12
作者
Lu, Hsin-Chia [1 ]
Wang, Yuan-Hong [1 ]
Leou, Jeng-Long [2 ]
Chan, Harrison [2 ]
Chen, Scott [2 ]
机构
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei, Taiwan
[2] ASE Grp, Taipei, Taiwan
来源
2016 IEEE 66TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC) | 2016年
关键词
fanout; wafer level package; chip last; transmission lines; millimeter wave;
D O I
10.1109/ECTC.2016.197
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Traditional FOWLP (fan out wafer level package) requires relative expensive semiconductor equipment to form RDL layers. On the other hand, fan out chip last package (FOCLP) uses low cost substrate and packaging equipment to produce essentially same final package structure. As transmission lines and transitions within a package are crucial to the RF and millimeter wave performances, this paper will investigate RF and millimeter wave performances of several different transmission line structures in different stacking of low cost coreless substrates of FOCLP. The loss and beta of transmission lines on these substrates will be compared to provide a basis for future substrate stacking selection. Active dies will also be embedded in this package and the transition from output ports in package to ports on die will be investigated.
引用
收藏
页码:1303 / 1308
页数:6
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