Interfacial reactions between indium tin oxide and triphenylamine tetramer layers induced by photoirradiation

被引:20
作者
Satoh, Toshikazu [1 ]
Fujikawa, Hisayoshi [1 ]
Yamamoto, Ichiro [2 ]
Murasaki, Takanori [2 ]
Kato, Yoshifumi [2 ]
机构
[1] Toyota Cent Res & Dev Labs Inc, Aichi 4801192, Japan
[2] Toyota Ind Corp, Aichi 4748601, Japan
关键词
D O I
10.1063/1.2921798
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effects of photoirradiation on the interfacial chemical reactions between indium tin oxide (ITO) films and layers of triphenylamine tetramer (TPTE) were investigated by using in situ x-ray photoelectron spectroscopy (XPS). Thin TPTE layers deposited onto sputter-deposited ITO films were irradiated with violet light-emitting diodes (peak wavelength: 380 nm). Shifts in the peak positions of spectral components that originated in the organic layer toward the higher binding-energy side were observed in the XPS profiles during the early stages of irradiation. No further peak shifts were observed after additional irradiation. An increase in the ratio of the organic component in the O 1s spectra was also observed during the photoirradiation. The ratio of the organic component increased in proportion to the cube root of the irradiation time. These results suggest that photoirradiation induces an increase in the height of the carrier injection barrier at the interface between TPTE and ITO in the early stages of the irradiation, possibly due to the rapid diffusion controlled formation and growth of an oxidized TPTE layer, which is considered to act as a high resistance layer. (C) 2008 American Institute of Physics.
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