Silicon columnar microstructures induced by an SF6/O2 plasma

被引:77
|
作者
Dussart, R [1 ]
Mellhaoui, X [1 ]
Tillocher, T [1 ]
Lefaucheux, P [1 ]
Volatier, M [1 ]
Socquet-Clerc, C [1 ]
Brault, P [1 ]
Ranson, P [1 ]
机构
[1] Univ Orleans, GREMI, F-45067 Orleans, France
关键词
D O I
10.1088/0022-3727/38/18/012
中图分类号
O59 [应用物理学];
学科分类号
摘要
An inductively coupled SF6/O-2 plasma is used to form a columnar microstructure (CMS) on silicon samples cooled at very low temperature (similar to -100 degrees C). The formation of this CMS is studied as a function of bias voltage, temperature, RF power and gas pressure. The characteristic mean diameter and mean height of the microstructure are evaluated by image processing tools from SEM micrographs. A crystallographic effect is also observed at very low temperature, which induces a needle-shaped structure. A physical mechanism is proposed to explain the formation of this CMS.
引用
收藏
页码:3395 / 3402
页数:8
相关论文
共 50 条
  • [1] The etching of silicon carbide in inductively coupled SF6/O2 plasma
    Plank, NOV
    Blauw, MA
    van der Drift, EWJM
    Cheung, R
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2003, 36 (05) : 482 - 487
  • [2] Silicon doping effect on SF6/O2 plasma chemical texturing
    Dilonardo, Elena
    Bianco, Giuseppe Valerio
    Giangregorio, Maria Michela
    Losurdo, Maria
    Capezzuto, Pio
    Bruno, Giovanni
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (01)
  • [3] Inverse RIE Lag during Silicon Etching in SF6 + O2 Plasma
    Knizikevicius, R.
    ACTA PHYSICA POLONICA A, 2020, 137 (03) : 313 - 316
  • [4] Study on plasma etching of β-SiC thin films in SF6 and the SF6 + O2 mixtures
    Institute of Microelectronics, Xidian University, Xi'an 710071, China
    Wuli Xuebao, 3 (554-555):
  • [5] DETECTION OF SULFUR DIMERS IN SF6 AND SF6/O2 PLASMA-ETCHING DISCHARGES
    GREENBERG, KE
    HARGIS, PJ
    APPLIED PHYSICS LETTERS, 1989, 54 (14) : 1374 - 1376
  • [6] KINETIC MODEL FOR PLASMA ETCHING SILICON IN A SF6/O2 RF DISCHARGE.
    Anderson, H.M.
    Merson, J.A.
    Light, R.W.
    IEEE Transactions on Plasma Science, 1986, PS-14 (02) : 156 - 164
  • [7] Simulation of cryogenic silicon etching under SF6/O2/Ar plasma discharge
    Haidar, Yehya
    Rhallabi, Ahmed
    Pateau, Amand
    Mokrani, Arezki
    Taher, Fadia
    Roqueta, Fabrice
    Boufnichel, Mohamed
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2016, 34 (06):
  • [8] Cyclic, cryogenic, highly anisotropic plasma etching of silicon using SF6/O2
    Isakovic, A. F.
    Evans-Lutterodt, K.
    Elliott, D.
    Stein, A.
    Warren, J. B.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2008, 26 (05): : 1182 - 1187
  • [9] Etching of high aspect ratio features in Si using SF6/O2/HBr and SF6/O2/Cl2 plasma
    Gomez, S
    Belen, RJ
    Kiehlbauch, M
    Aydil, ES
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2005, 23 (06): : 1592 - 1597
  • [10] SF6/O2 plasma for ICP/RIE SiC Etching
    Cesar, R. R.
    Mederos, M.
    Cioldin, F. H.
    Beraldo, R. M.
    Teixeira, R. C.
    Minamisawa, R. A.
    Diniz, J. A.
    2024 38TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES, SBMICRO 2024, 2024,