Silicon columnar microstructures induced by an SF6/O2 plasma

被引：77

作者：

Dussart, R ^{[1
]}

Mellhaoui, X ^{[1
]}

Tillocher, T ^{[1
]}

Lefaucheux, P ^{[1
]}

Volatier, M ^{[1
]}

Socquet-Clerc, C ^{[1
]}

Brault, P ^{[1
]}

Ranson, P ^{[1
]}

机构：

[1] Univ Orleans, GREMI, F-45067 Orleans, France

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2005年 / 38卷 / 18期

关键词：

D O I：

10.1088/0022-3727/38/18/012

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An inductively coupled SF6/O-2 plasma is used to form a columnar microstructure (CMS) on silicon samples cooled at very low temperature (similar to -100 degrees C). The formation of this CMS is studied as a function of bias voltage, temperature, RF power and gas pressure. The characteristic mean diameter and mean height of the microstructure are evaluated by image processing tools from SEM micrographs. A crystallographic effect is also observed at very low temperature, which induces a needle-shaped structure. A physical mechanism is proposed to explain the formation of this CMS.

引用

页码：3395 / 3402

页数：8

共 19 条

[1] Cryogenic etching of deep narrow trenches in silicon [J].

Aachboun, S ;

Ranson, P ;

Hilbert, C ;

Boufnichel, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (04) :1848-1852

[2] Deep anisotropic etching of silicon [J].

Aachboun, S ;

Ranson, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (04) :2270-2273

[3] LOW-TEMPERATURE ETCHING OF SI IN HIGH-DENSITY PLASMA USING SF6/O-2 [J].

BARTHA, JW ;

GRESCHNER, J ;

PUECH, M ;

MAQUIN, P .

MICROELECTRONIC ENGINEERING, 1995, 27 (1-4) :453-456

[4] Electron cyclotron resonance oxygen plasma etching of diamond [J].

Bernard, M ;

Deneuville, A ;

Ortega, L ;

Ayadi, K ;

Muret, P .

[5] Balancing the etching and passivation in time-multiplexed deep dry etching of silicon [J].

Blaw, MA ;

Zijlstra, T ;

van der Drift, E .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06) :2930-2934

[6] Profile control of high aspect ratio trenches of silicon. I. Effect of process parameters on local bowing [J].

Boufnichel, M ;

Aachboun, S ;

Grangeon, F ;

Lefaucheux, P ;

Ranson, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (04) :1508-1513

[7]

BURGERS AR, 1998, 2 PHOT WORLD C VIENN

[8] Temperature influence on etching deep holes with SF6/O2 cryogenic plasma [J].

Craciun, G ;

Blauw, MA ;

van der Drift, E ;

Sarro, PM ;

French, PJ .

JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2002, 12 (04) :390-394

[9] Guidelines for etching silicon MEMS structures using fluorine high-density plasmas at cryogenic temperatures [J].

de Boer, MJ ;

Gardeniers, JGE ;

Jansen, HV ;

Smulders, E ;

Gilde, MJ ;

Roelofs, G ;

Sasserath, JN ;

Elwenspoek, M .

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2002, 11 (04) :385-401

[10] Passivation mechanisms in cryogenic SF6/O2 etching process [J].

Dussart, R ;

Boufnichel, M ;

Marcos, G ;

Lefaucheux, P ;

Basillais, A ;

Benoit, R ;

Tillocher, T ;

Mellhaoui, X ;

Estrade-Szwarckopf, H ;

Ranson, P .

JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2004, 14 (02) :190-196

← 1 2 →