A Study of High-Voltage p-Type MOSFET Degradation Under AC Stress

被引：3

作者：

Lee, Dongjun ^{[1
,2
]}

Na, Chungje ^{[1
]}

Lee, Chiwoo ^{[1
]}

Lee, Changsub ^{[1
]}

Hur, Sunghoi ^{[1
]}

Song, Duheon ^{[1
]}

Choi, Junghyuk ^{[1
]}

Choi, Byoungdeog ^{[3
]}

机构：

[1] Samsung Elect Co Ltd, Memory Div, Hwasung 445701, South Korea

[2] Sungkyunkwan Univ, Sch Informat & Commun Engn, Suwon 440746, South Korea

[3] Sungkyunkwan Univ, Sch Informat & Commun Engn, Suwon 440746, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 09期

关键词：

AC stress; Fowler-Nordheim (FN) degradation; high-voltage (HV) p-type MOSFET; negative-bias temperature instability (NBTI); saturation; BIAS TEMPERATURE-INSTABILITY; COMPREHENSIVE MODEL; NBTI DEGRADATION; TRANSPORT; DEVICES; IMPACT;

D O I：

10.1109/TED.2015.2451003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the degradation characteristics of high-voltage (HV) p-type MOSFETs are investigated during negative unipolar ac stress on the gate electrode. The threshold voltage under ac stress is shifted gradually by both the negative-bias temperature-instability mechanism and Fowler-Nordheim degradation. We qualitatively analyze the degradation characteristics of HV p-type MOSFETs under ac stress, and observe the threshold voltage saturation for HV p-type MOSFETs at long ac stress. Based on the effects of temperature and duty cycles, we offer a suitable model of degradation saturation after long ac stress, which is caused by interface trap saturation and recovery during pulse delay timing, which is dependent on thermal activation energy.

引用

页码：2940 / 2944

页数：5

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