45nm LSTP FET with FUSI gate on PVD-HfO2 with excellent drivability by advanced PDA treatment

Reaction behavior between Ni-FUSI gate and PVD-HfO2 gate dielectrics during FUSI formation was examined. A SiN cap between FUSI and HfO2 was found to increase the yield of the transistors, however, The scatter in the electrical properties was attributed to micro holes in the SiN cap that were produced by during the NiSi formation it could not suppress a scatter of the electrical property. The scatter in the electrical properties was attributed to micro holes in the SiN cap that were produced by during the NiSi formation The change of PDA condition from 700C to 1000C could suppress the generations of micro holes within the SiN cap. By these treatments, decent electrical characteristics were obtained, i.e., I-on, (n/p) =600/180 uA/um at I-off = 20 pA/um at Vdd = 1.1V.