Synthesis and photoelectrochemical behavior of CdS quantum dots-sensitized indium-tin-oxide mesoporous film

被引：10

作者：

Chen, Haining ^{[1
]}

Zhu, Liqun ^{[1
]}

Li, Weiping ^{[1
]}

Liu, Huicong ^{[1
]}

机构：

[1] Beihang Univ, Key Lab Aerosp Mat & Performance, Sch Mat Sci & Engn, Minist Educ, Beijing 100191, Peoples R China

来源：

CURRENT APPLIED PHYSICS | 2012年 / 12卷 / 01期

关键词：

Indium-tin-oxide; Mesoporous film; CdS quantum dot; Photoelectrode; Photoelectrochemical property; CARBON NANOTUBE; SOLAR; SIZE; PHOTOSENSITIZATION; PERFORMANCE; CELL;

D O I：

10.1016/j.cap.2011.05.018

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we reported an investigation on a new photoelectrode of quantum dots-sensitized solar cell (QDSC) combining indium-tin-oxide (ITO) mesoporous film and CdS quantum dots (QDs). The ITO mesoporous film was prepared by doctor-blade technique and CdS QDs attached on ITO mesoporous film were synthesized by successive ionic layer adsorption and reaction method. X-ray diffraction, field emission scanning electron microscopy, transmission electron microscope, X-ray spectroscopy and UV-vis spectroscopy were used to characterize the samples. The results indicated that the ITO mesoporous film was uniform, crack-free and highly porous. And absorbance in visible region was enhanced after the deposition of CdS QDs on ITO mesoporous film. The photoelectrochemical property of the CdS QDs-sensitized ITO mesoporous film photoelectrode was investigated by forming a photoelectrochemical cell. Photocurrent-voltage measurement showed that the photoelectrode was efficient in the cell as working electrode. (C) 2011 Elsevier B. V. All rights reserved.

引用

页码：129 / 133

页数：5

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