Experimental signature and physical mechanisms of substrate enhanced gate current in MOS devices

被引：13

作者：

Esseni, D ^{[1
]}

Selmi, L ^{[1
]}

机构：

[1] Univ Bologna, DEIS, I-40136 Bologna, Italy

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746425

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper examines in detail the phenomenon of Substrate Enhanced Electron Injection (SEEI, [1, 2]). By using floating gate devices less aggressively scaled than the MOSFETs of [1] we are able to: 1) develop criteria to separate SEEI from the coexisting channel hot electron (CHE) injection; 2) point out a direct proportionality between the gate (I-G) and the substrate (I-B) currents that provides a signature of SEEI; 3) reconcile SEEI with reported mechanisms of optical minority carrier generation in the substrate [3, 4].

引用

页码：579 / 582

页数：4

共 10 条

[1]

AURICCHIO C, 1996, P EUR SOL STAT DEV R, P613

[2] Secondary electron flash -: a high performance, low power flash technology for 0.35 μm and below [J].