High-power highly reliable 1.02-1.06-μm InGaAs strained-quantum-well laser diodes

By growing the InGaAs active layer at temperatures lower than in conventional growth, we extended the lasing wavelength and presented the high reliability in InGaAs strained-quantum-well laser diodes. Equivalent I-L characteristics were obtained for 1.02-, 1.05-, and 1.06-mum laser diodes with A cavity length of 1200 pin. Maximum output power as high as 800 mW and fundamental transverse mode operation at up to 400 mW were obtained at 1.06 mum and an 1800-mum cavity. Stable operation was observed for over 14000 h under auto-power-control of 225 mW at 50 degreesC for the 1.02-, 1.05-, and 1.06-mum lasers with a 900-mum cavity.