Inkjet-printing of indium tin oxide (ITO) films for transparent conducting electrodes
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作者:
Hwang, Myun-sung
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Korea Inst Ceram Engn & Technol, Future Convergence Ceram Div, Seoul 153801, South Korea
Yonsei Univ, Dept Adv Mat Engn, Seoul 120749, South KoreaKorea Inst Ceram Engn & Technol, Future Convergence Ceram Div, Seoul 153801, South Korea
Hwang, Myun-sung
[1
,2
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Jeong, Bong-yong
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Korea Inst Ceram Engn & Technol, Future Convergence Ceram Div, Seoul 153801, South KoreaKorea Inst Ceram Engn & Technol, Future Convergence Ceram Div, Seoul 153801, South Korea
Jeong, Bong-yong
[1
]
Moon, Jooho
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Yonsei Univ, Dept Adv Mat Engn, Seoul 120749, South KoreaKorea Inst Ceram Engn & Technol, Future Convergence Ceram Div, Seoul 153801, South Korea
Moon, Jooho
[2
]
Chun, Sang-Ki
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LG Chem, Taejon 305380, South KoreaKorea Inst Ceram Engn & Technol, Future Convergence Ceram Div, Seoul 153801, South Korea
Chun, Sang-Ki
[3
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Kim, Jihoon
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Korea Inst Ceram Engn & Technol, Future Convergence Ceram Div, Seoul 153801, South KoreaKorea Inst Ceram Engn & Technol, Future Convergence Ceram Div, Seoul 153801, South Korea
Kim, Jihoon
[1
]
机构:
[1] Korea Inst Ceram Engn & Technol, Future Convergence Ceram Div, Seoul 153801, South Korea
[2] Yonsei Univ, Dept Adv Mat Engn, Seoul 120749, South Korea
Indium-tin-oxide (ITO) films have been prepared by inkjet-printing using ITO nanoparticle inks. The electrical and optical properties of the ITO films were investigated in order to understand the effects of annealing temperatures under microwave. The decrease in the sheet resistance and resistivity of the inkjet-printed ITO films was observed as the annealing temperature increases. The film annealed at 400 degrees C showed the sheet resistance of 517 Omega/sq with the film thickness of similar to 580 nm. The optical transmittance of the films remained constant regardless of their annealing temperatures. In order to further reduce the sheet resistance of the films. Ag-grid was printed in between two layers of inkjet-printed ITO. With 3 mm Ag-grid line-to-line pitch, the Ag-grid inserted ITO film has the sheet resistance of 3.4 Omega/sq and the transmittance of 84% after annealing at 200 degrees C under microwave. (C) 2011 Elsevier B.V. All rights reserved.
机构:
Korea Univ, Dept Nanophoton, Seoul 136713, South KoreaKorea Univ, Dept Nanophoton, Seoul 136713, South Korea
Kim, Dae-Hyun
Lee, Han-Kyeol
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Kyung Hee Univ, Dept Appl Phys, Gyeonggi Do 446701, South KoreaKorea Univ, Dept Nanophoton, Seoul 136713, South Korea
Lee, Han-Kyeol
Na, Jin-Young
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Kyung Hee Univ, Dept Appl Phys, Gyeonggi Do 446701, South KoreaKorea Univ, Dept Nanophoton, Seoul 136713, South Korea
Na, Jin-Young
Kim, Sun-Kyung
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Kyung Hee Univ, Dept Appl Phys, Gyeonggi Do 446701, South KoreaKorea Univ, Dept Nanophoton, Seoul 136713, South Korea
Kim, Sun-Kyung
Yoo, Young-Zo
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Duksan HiMetal Co Ltd, Ulsan 683804, South KoreaKorea Univ, Dept Nanophoton, Seoul 136713, South Korea
Yoo, Young-Zo
Seong, Tae-Yeon
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Korea Univ, Dept Nanophoton, Seoul 136713, South Korea
Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South KoreaKorea Univ, Dept Nanophoton, Seoul 136713, South Korea