Inkjet-printing of indium tin oxide (ITO) films for transparent conducting electrodes

被引：85

作者：

Hwang, Myun-sung ^{[1
,2
]}

Jeong, Bong-yong ^{[1
]}

Moon, Jooho ^{[2
]}

Chun, Sang-Ki ^{[3
]}

Kim, Jihoon ^{[1
]}

机构：

[1] Korea Inst Ceram Engn & Technol, Future Convergence Ceram Div, Seoul 153801, South Korea

[2] Yonsei Univ, Dept Adv Mat Engn, Seoul 120749, South Korea

[3] LG Chem, Taejon 305380, South Korea

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2011年 / 176卷 / 14期

关键词：

Inkjet; Printing; ITO; Ag-grid; POLYMER TRANSISTOR-CIRCUITS; LIGHT-EMITTING DEVICES; THIN-FILMS;

D O I：

10.1016/j.mseb.2011.05.053

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium-tin-oxide (ITO) films have been prepared by inkjet-printing using ITO nanoparticle inks. The electrical and optical properties of the ITO films were investigated in order to understand the effects of annealing temperatures under microwave. The decrease in the sheet resistance and resistivity of the inkjet-printed ITO films was observed as the annealing temperature increases. The film annealed at 400 degrees C showed the sheet resistance of 517 Omega/sq with the film thickness of similar to 580 nm. The optical transmittance of the films remained constant regardless of their annealing temperatures. In order to further reduce the sheet resistance of the films. Ag-grid was printed in between two layers of inkjet-printed ITO. With 3 mm Ag-grid line-to-line pitch, the Ag-grid inserted ITO film has the sheet resistance of 3.4 Omega/sq and the transmittance of 84% after annealing at 200 degrees C under microwave. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1128 / 1131

页数：4

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