The CDF silicon detector upgrade

被引:1
|
作者
Azzi, P [1 ]
机构
[1] Ist Nazl Fis Nucl, Sez Padova, I-35131 Padua, Italy
关键词
silicon detector upgrade; intermediate silicon layers;
D O I
10.1016/S0168-9002(98)00830-4
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A major silicon upgrade project is under way for the CDFII experiment that will operate during Run II of the Tevatron in the year 2000. The innermost detector, SVXII, will cover the interaction region with three barrels of live layers of double-sided microstrip detectors. In the radial gap between the SVXII and the new main tracking chamber (COT) will be located the ISL that consists of two planes of double-sided microstrip detectors at large pseudorapidity and one in the central region. A description of the project design and its motivation is presented here. (C) 1998 Elsevier Science B.V. All rights reserved.
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页码:532 / 537
页数:6
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