A Compact, Low-Power Analog Front-End With Event-Driven Input Biasing for High-Density Neural Recording in 22-nm FDSOI

被引:12
|
作者
Huang, Xiaohua [1 ,2 ]
Ballini, Marco [2 ,3 ]
Wang, Shiwei [2 ,4 ]
Miccoli, Beatrice [2 ,5 ]
van Hoof, Chris [1 ,2 ]
Gielen, Georges [1 ,2 ]
Craninckx, Jan [2 ]
van Helleputte, Nick [2 ]
Lopez, Carolina Mora [2 ]
机构
[1] Katholieke Univ Leuven, Dept Elect Engn ESAT MICAS, B-3001 Leuven, Belgium
[2] IMEC, Life Sci Technol, B-3001 Leuven, Belgium
[3] TDK InvenSense, Microphone Business Unit, I-20057 Milan, Italy
[4] Univ Southampton, Dept Elect & Comp Sci, Southampton SO17 1BJ, Hants, England
[5] Dept Phys & Astron, Lab Soft Matter & Biophys, B-3001 Leuven, Belgium
关键词
Small area; low power; AFE; multi-channel neural recording; reset alignment; event driven; incremental; Delta sigma ADC; AC-coupling; direct data conversion; reconstruction; MU-W; AMPLIFIER; MM(2);
D O I
10.1109/TCSII.2021.3111257
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An ultra-small-area, low-power analog frontend (AFE) for high-density neural recording is presented in this brief. It features an 11-bit incremental delta-sigma analog-to-digital converter (Delta Sigma ADC) enhanced with an offset-rejecting event-driven input biasing network. This network avoids saturation of the ADC input caused by leakage of the input-coupling capacitor implemented in an advanced technology node. Combining AC-coupling with direct data conversion, the proposed AFE can tolerate a rail-to-rail electrode offset and achieves a good trade-off between power, noise, bandwidth, input impedance, and area. Fabricated in a 22-nm fully-depleted silicon on insulator (FDSOI) process, the design occupies an active area of <0.001 mm(2), the smallest obtained to this date for a neural AFE, and consumes <3 mu W from a 0.8-V supply. It achieves an input-referred noise of 11.3 mu Vrms in the action potential band (300 Hz - 10 kHz) and 10 mu V-rms in the local field potential band (1 Hz - 300 Hz).
引用
收藏
页码:804 / 808
页数:5
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