Lateral-longitudinal near field measurements of 10 micrometer broad ridge blue laser diodes

被引：2

作者：

Kunzmann, Dominic J. ^{[1
]}

Uhlig, Lukas ^{[1
]}

Tepass, Jannina J. ^{[1
]}

Kafar, Anna ^{[2
,3
]}

Stanczyk, Szymon ^{[2
,3
]}

Perlin, Piotr ^{[2
,3
]}

Schwarz, Ulrich T. ^{[1
]}

机构：

[1] Tech Univ Chemnitz, Inst Phys, D-09126 Chemnitz, Germany

[2] Inst High Pressure Phys PAS, Warsaw, Poland

[3] TOP GAN Ltd, Warsaw, Poland

来源：

GALLIUM NITRIDE MATERIALS AND DEVICES XVII | 2022年 / 12001卷

关键词：

GaN; laser diode; broad ridge laser diode; near field; high resolution; streak camera;

D O I：

10.1117/12.2608109

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We investigate the lateral near field of blue laser diodes with 10 mu m broad ridges in pulsed conditions. While scanning the near field step by step with the help of a streak camera, we observe complex dynamics due to lateral-longitudinal mode competition, wavelength shifts and lateral mode switching. Additionally, a high-resolution spectrometer enables us to differentiate between the different mode combs which form the longitudinal mode spectrum. We observe filling of the gain volume and a spectral broadening with increasing current, as well as a slight asymmetry and an inhomogeneous lateral mode pattern.

引用

页数：9

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