Low-temperature thin film transistors based on pulsed laser deposited CdS active layers

被引:9
|
作者
Martinez-Landeros, V. H. [1 ,2 ]
Hernandez-Como, N. [3 ]
Gutierrez-Heredia, G. [2 ,4 ]
Ramirez-Bon, R. [6 ]
Quevedo-Lopez, M. A. [5 ]
Aguirre-Tostado, F. S. [2 ]
机构
[1] Univ Autonoma Coahuila, Fac Met, Carr 57,Km 5, Monclova 25720, Coahuila, Mexico
[2] Ctr Invest Mat Avanzados, Monterrey 66600, Nuevo Leon, Mexico
[3] Inst Politecn Nacl, Ctr Nanociencias & Micro & Nanotecnol, Mexico City 07738, DF, Mexico
[4] Ctr Invest Opt, Guanajuato 37000, Mexico
[5] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
[6] Ctr Invest & Estudios Avanzados IPN, Unidad Queretaro Apdo, Postal 1-798, Queretaro 76001, Queretaro, Mexico
关键词
cadmium sulfide; pulsed laser deposition (PLD); thin film transistors (TFTs); OPTICAL-PROPERTIES; SOLAR-CELLS; FABRICATION; SUBSTRATE; MICROSTRUCTURE; STABILITY; TRANSPORT; GROWTH; OXIDE;
D O I
10.1088/1361-6641/aaf66d
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Cadmium sulfide (CdS) thin films as n-type semiconductor material were deposited by pulsed laser deposition by varying the argon pressure at room temperature. The structural, morphological and stoichiometric characteristics of the CdS films were studied as a function of the deposition pressure. The results show that the argon deposition pressure had a dramatic impact on the CdS film properties. The CdS electrical resistivity increased 10(4) times when argon pressure was increased from 8 to 10.66 Pa. These films were employed on fully-patterned thin film transistors (TFTs) fabricated by a photolithography-based process, and their electrical characteristics were measured. The TFTs electrical performance achieved a mobility of similar to 24 cm(2)/V-s with a threshold voltage from 1.5 to 12.6 V after testing. The deposition pressure of CdS for transistors fabrication, which optimizes the resulting electrical characteristics, was determined from this study.
引用
收藏
页数:9
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