Thermal mechanisms in laser ablation of GaAs

被引:14
作者
Craciun, V
Craciun, D
机构
[1] Laser Department, IFTAR
关键词
D O I
10.1016/S0169-4332(96)00740-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Estimations of GaAs surface temperature during laser irradiation, using recently published optical data and their temperature dependence for laser fluences around the melting threshold and photon-energies above the band-gap energy are presented in this work. These results are compared with the experimentally measured ablation threshold values of Okano et al. [J. Phys.: Condense Matter 6 (1994) 2697] and Vivet et al. [J. Appl. Phys. 78 (1995)]. The good agreement observed between the temperature estimations and the measured ablation threshold fluences suggests that thermal mechanisms are important in laser ablation of GaAs with photon-energies greater than the band-gap energy.
引用
收藏
页码:312 / 316
页数:5
相关论文
共 22 条
  • [21] A NEW OPTICAL-TEMPERATURE MEASUREMENT TECHNIQUE FOR SEMICONDUCTOR SUBSTRATES IN MOLECULAR-BEAM EPITAXY
    WEILMEIER, MK
    COLBOW, KM
    TIEDJE, T
    VANBUUREN, T
    XU, L
    [J]. CANADIAN JOURNAL OF PHYSICS, 1991, 69 (3-4) : 422 - 426
  • [22] TEMPERATURE BEHAVIOR OF IMPLANTED AND PULSED-LASER IRRADIATED GAAS
    ZOLLO, G
    PALUMBO, L
    ROSSI, M
    VITALI, G
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1993, 56 (05): : 409 - 411