Strain-induced polarization rotation in epitaxial (001) BiFeO3 thin films

被引:236
作者
Jang, H. W. [1 ]
Baek, S. H. [1 ]
Ortiz, D. [1 ]
Folkman, C. M. [1 ]
Das, R. R. [1 ]
Chu, Y. H. [2 ,3 ]
Shafer, P. [2 ,3 ]
Zhang, J. X. [4 ]
Choudhury, S. [4 ]
Vaithyanathan, V. [4 ]
Chen, Y. B. [5 ]
Felker, D. A. [6 ]
Biegalski, M. D. [7 ]
Rzchowski, M. S. [6 ]
Pan, X. Q. [5 ]
Schlom, D. G. [8 ]
Chen, L. Q. [4 ]
Ramesh, R. [2 ,3 ]
Eom, C. B. [1 ]
机构
[1] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
[2] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[4] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
[5] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
[6] Univ Wisconsin, Dept Phys, Madison, WI 53706 USA
[7] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
[8] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevLett.101.107602
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Direct measurement of the remanent polarization of high quality (001)-oriented epitaxial BiFeO(3) thin films shows a strong strain dependence, even larger than conventional (001)-oriented PbTiO(3) films. Thermodynamic analysis reveals that a strain-induced polarization rotation mechanism is responsible for the large change in the out-of-plane polarization of (001) BiFeO(3) with biaxial strain while the spontaneous polarization itself remains almost constant.
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页数:4
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共 19 条
  • [1] Enhancement of ferroelectricity in strained BaTiO3 thin films
    Choi, KJ
    Biegalski, M
    Li, YL
    Sharan, A
    Schubert, J
    Uecker, R
    Reiche, P
    Chen, YB
    Pan, XQ
    Gopalan, V
    Chen, LQ
    Schlom, DG
    Eom, CB
    [J]. SCIENCE, 2004, 306 (5698) : 1005 - 1009
  • [2] Synthesis and ferroelectric properties of epitaxial BiFeO3 thin films grown by sputtering
    Das, R. R.
    Kim, D. M.
    Baek, S. H.
    Eom, C. B.
    Zavaliche, F.
    Yang, S. Y.
    Ramesh, R.
    Chen, Y. B.
    Pan, X. Q.
    Ke, X.
    Rzchowski, M. S.
    Streiffer, S. K.
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (24)
  • [3] Effect of epitaxial strain on the spontaneous polarization of thin film ferroelectrics
    Ederer, C
    Spaldin, NA
    [J]. PHYSICAL REVIEW LETTERS, 2005, 95 (25)
  • [4] Influence of strain and oxygen vacancies on the magnetoelectric properties of multiferroic bismuth ferrite
    Ederer, C
    Spaldin, NA
    [J]. PHYSICAL REVIEW B, 2005, 71 (22)
  • [5] Direct structural determination in ultrathin ferroelectric films by analysis of synchrotron x-ray scattering measurements
    Fong, DD
    Cionca, C
    Yacoby, Y
    Stephenson, GB
    Eastman, JA
    Fuoss, PH
    Streiffer, SK
    Thompson, C
    Clarke, R
    Pindak, R
    Stern, EA
    [J]. PHYSICAL REVIEW B, 2005, 71 (14)
  • [6] Polarization rotation mechanism for ultrahigh electromechanical response in single-crystal piezoelectrics
    Fu, HX
    Cohen, RE
    [J]. NATURE, 2000, 403 (6767) : 281 - 283
  • [7] Room-temperature ferroelectricity in strained SrTiO3
    Haeni, JH
    Irvin, P
    Chang, W
    Uecker, R
    Reiche, P
    Li, YL
    Choudhury, S
    Tian, W
    Hawley, ME
    Craigo, B
    Tagantsev, AK
    Pan, XQ
    Streiffer, SK
    Chen, LQ
    Kirchoefer, SW
    Levy, J
    Schlom, DG
    [J]. NATURE, 2004, 430 (7001) : 758 - 761
  • [8] Epitaxial (001) BiFeO3 membranes with substantially reduced fatigue and leakage
    Jang, H. W.
    Baek, S. H.
    Ortiz, D.
    Folkman, C. M.
    Eom, C. B.
    Chu, Y. H.
    Shafer, P.
    Ramesh, R.
    Vaithyanathan, V.
    Schlom, D. G.
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (06)
  • [9] Effect of epitaxial strain on ferroelectric polarization in multiferroic BiFeO3 films
    Kim, Dae Ho
    Lee, Ho Nyung
    Biegalski, Michael D.
    Christen, Hans M.
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (01)
  • [10] STRUCTURE OF A FERROELECTRIC AND FERROELASTIC MONODOMAIN CRYSTAL OF THE PEROVSKITE BIFEO3
    KUBEL, F
    SCHMID, H
    [J]. ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE, 1990, 46 : 698 - 702