Strain-induced polarization rotation in epitaxial (001) BiFeO3 thin films

被引:236
|
作者
Jang, H. W. [1 ]
Baek, S. H. [1 ]
Ortiz, D. [1 ]
Folkman, C. M. [1 ]
Das, R. R. [1 ]
Chu, Y. H. [2 ,3 ]
Shafer, P. [2 ,3 ]
Zhang, J. X. [4 ]
Choudhury, S. [4 ]
Vaithyanathan, V. [4 ]
Chen, Y. B. [5 ]
Felker, D. A. [6 ]
Biegalski, M. D. [7 ]
Rzchowski, M. S. [6 ]
Pan, X. Q. [5 ]
Schlom, D. G. [8 ]
Chen, L. Q. [4 ]
Ramesh, R. [2 ,3 ]
Eom, C. B. [1 ]
机构
[1] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
[2] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[4] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
[5] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
[6] Univ Wisconsin, Dept Phys, Madison, WI 53706 USA
[7] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
[8] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevLett.101.107602
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Direct measurement of the remanent polarization of high quality (001)-oriented epitaxial BiFeO(3) thin films shows a strong strain dependence, even larger than conventional (001)-oriented PbTiO(3) films. Thermodynamic analysis reveals that a strain-induced polarization rotation mechanism is responsible for the large change in the out-of-plane polarization of (001) BiFeO(3) with biaxial strain while the spontaneous polarization itself remains almost constant.
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页数:4
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