Growth and structure of photosensitive Pb1-xMnxTe(Ga) epitaxial films

被引：1
|
作者：
Nuriev, I. R. [1 ]
Sadygov, R. M. [1 ]
Nazarov, A. M. [1 ]
机构：
[1] Azerbaijan Natl Acad Sci, Inst Phys, Baku AZ1143, Azerbaijan
来源：
CRYSTALLOGRAPHY REPORTS | 2008年 / 53卷 / 03期
关键词：
68.55.-a;
D O I：
10.1134/S1063774508030218
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The growth and structure of (1-1.5)-mu m-thick Pb1-xMnxTe(Ga) (x = 0.06) films with 0.4-0.9 at % of gallium, grown on BaF2 (111) and Pb1-xSnxTe (x = 0.2) (100) substrates by molecular beam epitaxy, have been investigated. It is established that the films are crystallized into an fcc stucture, and their growth planes are (111) and (100), according to the substrate oreintation. The optimal conditions for obtaining high-resistivity photosensitive p- and n-type films with a perfect crystal structure (W-1/2 = 80 ''-100 '') have been determined.
引用
收藏
页码：508 / 510
页数：3
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