Status of 157-nm optical lithography

被引:7
作者
Trybula, WJ [1 ]
机构
[1] SEMATECH, Austin, TX 78741 USA
来源
JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS | 2005年 / 4卷 / 01期
关键词
157-nm optical lithography; 193-nm immersion; Production lithography;
D O I
10.1117/1.1860401
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes the status of 157-nm lithography in mid 2004. With the rapid rise of 193-nm immersion from a potential concept in early 2002 at SPIE, through its development,to scheduled delivery of early production tools in late 2004 and early 2005, 157-nm lithography has taken a backseat in the development of optical lithographic technology. While significant challenges were conquered during the 2000 through 2002 period, the development was too slow to prevent 157-nm from being eclipsed by 193-nm immersion. This work reviews the challenges that were identified and conquered during the development of 157-nm lithography. The jury is still out on potential application to production lithography, although the main development effort has been seriously scaled back. There are still issues that remain to be solved before the technology could evolve into a full manufacturing system. The answer to the question of whether it will evolve or not is left to the future to answer. (c) 2005 Society of Photo-Optical Instrumentation Engineers.
引用
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页码:1 / 5
页数:5
相关论文
共 12 条
  • [1] Intrinsic birefringence in calcium fluoride and barium fluoride
    Burnett, JH
    Levine, ZH
    Shirley, EL
    [J]. PHYSICAL REVIEW B, 2001, 64 (24)
  • [2] BURNETT JH, 2001, CALCIUM FLUORIDE BIR
  • [3] CHAPPELL J, 2004, ELECT NEWS 0225
  • [4] ENGELSTAD R, 1998, P SOC PHOTO-OPT INS, V3546, P214
  • [5] ENGELSTAD R, 2003, SEMATECH REPORT
  • [6] FRENCH R, 2004, STRUCTURE COMPOSITIO
  • [7] KNAPP K, 2004, 2004 LITHO FORUM JAN
  • [8] LAMMERS D, 2004, EETIMES
  • [9] ROTHSCHILD M, COMMUNICATION
  • [10] *SEMATECH, 2004, LITH