Optical quantum memory for polarization qubits with V-type three-level atoms

被引:6
|
作者
Viscor, D. [1 ]
Ferraro, A. [1 ]
Loiko, Yu [1 ,2 ]
Corbalan, R. [1 ]
Mompart, J. [1 ]
Ahufinger, V. [1 ,3 ]
机构
[1] Univ Autonoma Barcelona, Dept Fis, E-08193 Bellaterra, Spain
[2] Natl Acad Sci, Inst Phys, Minsk 220072, BELARUS
[3] ICREA, Barcelona, Spain
关键词
ENTANGLEMENT; REPEATERS; PHOTONS; STORAGE; MATTER;
D O I
10.1088/0953-4075/44/19/195504
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We investigate an optical quantum memory scheme with V-type three-level atoms based on the controlled reversible inhomogeneous broadening technique. We theoretically show the possibility of storing and retrieving a weak light pulse interacting with the two optical transitions of the system. This scheme implements a quantum memory for a polarization qubit-a single photon in an arbitrary polarization state-without the need of two spatially separated two-level media, thus offering the advantage of experimental compactness overcoming the limitations due to mismatching and unequal efficiencies that can arise in spatially separated memories. The effects of a relative phase change between the atomic levels, as well as of phase noise due to, for example, the presence of spurious electric and magnetic fields are analysed.
引用
收藏
页数:9
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