Current transport modeling in carbon nanotube field effect transistors (CNT-FETs) and biosensing applications

被引：1
作者：
Marulanda, Jose M. [1 ]
Srivastava, Ashok [1 ]
Sharma, Ashwani K. [2 ]
机构：
[1] Louisiana State Univ, Dept Elect & Comp Engn, Baton Rouge, LA 70803 USA
[2] AFRL VSSE, Electron Fdn Grp, Kirtland AFB, NM 87117 USA
来源：
NANOSENSORS AND MICROSENSORS FOR BIO-SYSTEMS 2008 | 2008年 / 6931卷
关键词：
carbon nanotubes; CNT-FETs; analytical models; bio-sensors; chemical sensors;
D O I：
10.1117/12.775181
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Current transport in carbon nanotube field effect transistors (CNT-FETs) has been modeled from charge distributions and the potential inside the carbon nanotube. Analytical equations describing I-V characteristics of the CNT-FETs have been obtained from the combination of diffusion and drift mechanisms in the channel region for normal and subthreshold operations. It is shown that the electronic transport in semiconducting single-walled carbon nanotubes and field effect transistors can provide better understanding of their bio- and chemical sensing for the detection of traces of agents at molecular levels.
引用
收藏
页数：12
相关论文
共 50 条
  • [31] Using Lipophilic Membrane for Enhanced-Performance Aqueous Gated Carbon Nanotube Field Effect Transistors
    Joshi, Saumya
    Bhatt, Vijay Deep
    Jaworska, Ewa
    Becherer, Markus
    Maksymiuk, Krzysztof
    Michalska, Agata
    Lugli, Paolo
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 215 (11):
  • [32] LABEL-FREE BIOMOLECULAR DETECTION USING CARBON NANOTUBE FIELD EFFECT TRANSISTORS
    Byon, Hye Ryung
    Kim, Suphil
    Choi, Hee Cheul
    NANO, 2008, 3 (06) : 415 - 431
  • [33] Characteristics of Vertical Carbon Nanotube Field-Effect Transistors on p-GaAs
    Li, Jingqi
    Chen, Xiaofeng
    Iordache, Gheorghe
    Wei, Nini
    Alshareef, Husam N.
    NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2019, 11 (09) : 1239 - 1246
  • [34] Switching limits of top-gated carbon nanotube field-effect transistors
    Sanchez-Soares, A.
    Gilardi, C.
    Lin, Q.
    Kelly, T.
    Su, S. -K.
    Fagas, G.
    Greer, J. C.
    Pitner, G.
    Chen, E.
    SOLID-STATE ELECTRONICS, 2023, 202
  • [35] Sensors Based on the Carbon Nanotube Field-Effect Transistors for Chemical and Biological Analyses
    Deng, Yixi
    Liu, Lei
    Li, Jingyan
    Gao, Li
    BIOSENSORS-BASEL, 2022, 12 (10):
  • [36] Massive manufacture and characterization of single-walled carbon nanotube field effect transistors
    Martin-Fernandez, I.
    Sansa, M.
    Esplandiu, M. J.
    Lora-Tamayo, E.
    Perez-Murano, F.
    Godignon, P.
    MICROELECTRONIC ENGINEERING, 2010, 87 (5-8) : 1554 - 1556
  • [37] Improvement in Performance of Carbon Nanotube Field-Effect Transistors on Patterned SiO2/Si Substrates
    Maehashi, Kenzo
    Iwasaki, Shin
    Ohno, Yasuhide
    Kishimoto, Takaomi
    Inoue, Koichi
    Matsumoto, Kazuhiko
    JOURNAL OF ELECTRONIC MATERIALS, 2010, 39 (04) : 376 - 380
  • [38] Enhanced ambipolar charge transport in staggered carbon nanotube field-effect transistors for printed complementary-like circuits
    Baeg, Kang-Jun
    Jeong, Hee Jin
    Jeong, Seung Yol
    Han, Joong Tark
    Lee, Geon-Woong
    CURRENT APPLIED PHYSICS, 2017, 17 (04) : 541 - 547
  • [39] FABRICATION OF CARBON NANOTUBE FIELD EFFECT TRANSISTORS WITH OCMC DISPERSED SINGLE-WALLED CARBON NANOTUBES
    Raj, Kumar
    Zhang, Qing
    Yan, Liangyu
    Park, Mary B. Chan
    INTERNATIONAL JOURNAL OF NANOSCIENCE, 2010, 9 (04) : 377 - 381
  • [40] Compact modeling of optically gated carbon nanotube field effect transistor
    Liao, Si-Yu
    Maneux, Cristell
    Pouget, Vincent
    Fregonese, Sebastien
    Zimmer, Thomas
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2010, 247 (08): : 1858 - 1861
12345