Automatic determination of spatial dose distribution for improved accuracy in e-beam proximity effect correction

被引:3
|
作者
Lee, SY [1 ]
Laddha, J [1 ]
机构
[1] Auburn Univ, Dept Elect & Comp Engn, Auburn, AL 36849 USA
关键词
e-beam lithography; proximity correction; region-wise dose control;
D O I
10.1016/S0167-9317(01)00509-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Proximity effect correction in e-beam lithography is expected to be an essential step in the fabrication of high-density fine-feature circuits in the future. In the past, successful proximity correction by a shape modification approach with a single dose for the entire circuit pattern has been demonstrated. This approach has a few advantages over dose modification, including the fact that it is compatible with future multiple-beam or projection-based systems. As we continue to reduce the minimum feature size, accuracy of correction becomes more critical. In order to improve correction accuracy of the shape-only modification, a hybrid approach allowing region-wise dose control has been proposed. In this paper, a practical fast scheme for determining spatial dose distribution for the hybrid correction scheme is presented. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:303 / 309
页数:7
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