Enhanced crystal nucleation in a-SiGe/SiO2 by ion-irradiation assisted annealing

被引：22

作者：

Tsunoda, I ^{[1
]}

Kenjo, A ^{[1
]}

Sadoh, T ^{[1
]}

Miyao, M ^{[1
]}

机构：

[1] Kyushu Univ, Dept Elect, Fukuoka 8128581, Japan

来源：

APPLIED SURFACE SCIENCE | 2004年 / 224卷 / 1-4期

关键词：

solid-phase-crystallization; nucleation; ion-beam stimulation; SiGe; SiO2;

D O I：

10.1016/j.apsusc.2003.08.051

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ion beam stimulated solid phase crystallization of a-Si1-xGex (0 less than or equal to x less than or equal to 1) on SiO2 has been investigated. The critical temperature to cause crystal nucleation can be successfully decreased by 150 degreesC for a-Si1-xGex with all Ge fractions (0-100%) by using ion stimulation. As a result, crystal growth below the softening temperature (similar to500 degreesC) of glass substrates was achieved for samples with Ge fractions exceeding 50%. This method combined with Ge doping and ion stimulation will be a powerful tool to fabricate poly-SiGe TFTs on low cost glass substrates. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：231 / 234

页数：4

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