State-Resolved Mobility of 1 cm2/(Vs) with HgSe Quantum Dot Films

被引：18

作者：

Chen, Menglu ^{[2
,3
]}

Shen, Guohua ^{[2
,4
]}

Guyot-sionnest, Philippe ^{[1
,2
]}

机构：

[1] Univ Chicago, Dept Chem, Dept Phys, Chicago, IL 60637 USA

[2] Univ Chicago, James Franck Inst, Chicago, IL 60637 USA

[3] Univ Chicago, Dept Phys, Chicago, IL 60637 USA

[4] Univ Chicago, Dept Chem, Chicago, IL 60637 USA

来源：

JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2020年 / 11卷 / 06期

基金：

美国国家科学基金会;

关键词：

CHARGE-TRANSPORT; NANOCRYSTALS; SOLIDS;

D O I：

10.1021/acs.jpclett.0c00587

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

HgSe colloidal quantum dot films are made by using a hybrid ligand exchange (HgSe/hybrid) in polar inks and compared with the solid-state ligand exchange using ethanedithiol (HgSe/EDT). In both systems, the conductance shows a peak at one-electron filling of the 1S(e) state and a dip at 2 electrons before filling the 1P(e) state. The HgSe/hybrid films show a similar to 100-fold increased mobility, reaching up to similar to 1 cm(2)/Vs for 7.5 nm diameter particles. While field effect transistor and Hall measurements give similar carrier density and mobility, the temperature dependence of the mobility is consistent with hopping transport.

引用

页码：2303 / 2307

页数：5

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