Utilizing a photosensitive dry film resist in proton beam writing

被引：2

作者：

Seki, Hironori ^{[1
]}

Kawamura, Keiya ^{[1
]}

Hayashi, Hidetaka ^{[2
]}

Ishii, Yasuyuki ^{[3
]}

Puttaraksa, Nitipon ^{[4
,5
]}

Nishikawa, Hiroyuki ^{[1
]}

机构：

[1] Shibaura Inst Technol, Koto Ku, 3-7-5 Toyosu, Tokyo 1358548, Japan

[2] NPO Ecodesign Promot Network, Bunkyo Ku, Yayoi 2-11-16, Tokyo 1138656, Japan

[3] Takasaki Adv Radiat Res Inst, 1233 Watanukimachi, Takasaki, Gumma 3701292, Japan

[4] King Mongkuts Univ Technol, Fac Sci, Nanosci & Nanotechnol Grad Res Program, 126 Prachautid Rd, Bangkok 10140, Thailand

[5] King Mongkuts Univ Technol, Fac Sci, Appl Sci & Engn Social Solut Unit, 126 Prachautid Rd, Bangkok 10140, Thailand

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2022年 / 61卷 / SD期

关键词：

proton beam writing; dry film resists; photosensitivity; MICROFLUIDIC DEVICES; PHOTORESIST; FABRICATION;

D O I：

10.35848/1347-4065/ac55e1

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dry film resists (DFRs) are suitable for the fabrication of large volume devices as the thickness of the film can be easily controlled. Here, the DFR microstructures were patterned using the proton beam writing (PBW) technique by taking advantages of the direct-write process, straight trajectories of protons, and large processing depth. The results show that the required irradiation dose of 15 mu m DFR was 10 nC mm(-2) for 1 MeV protons. In summary, we have optimized the PBW conditions to create smooth surface micropatterns with a vertical wall in the DFR.

引用

页数：4

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