Integration of Isolated RF-LDMOS Transistors in a 0.25 μm SiGe:C BICMOS Process

被引：0

作者：

Sorge, R. ^{[1
]}

Fischer, A. ^{[1
]}

Schmidt, J. ^{[1
]}

Wipf, C. ^{[1
]}

Barth, R. ^{[1
]}

Pliquett, R. ^{[1
]}

机构：

[1] IHP, D-15236 Frankfurt, Oder, Germany

来源：

2011 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2011年

关键词：

Silicon bipolar/BiCMOS process technology; bipolar modeling and simulation; power devices; analog or digital circuits; RF circuits; device physics;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Isolated LDMOS transistors with thin gate oxides and good RF performance are key components in integrated RF circuits where large voltage shifts are required for the circuit functionality. We demonstrate the modular integration of isolated NLDMOS and PLDMOS focusing on maximal RF performance into an advanced industrial 0.25 mu m SiGe:C BICMOS process. A boundary condition for device construction was a limit for maximum deep n-well implantation energy of 750keV. The achieved values BVDSS/f(T)/f(MAX) of -21V/10GHz/35GHz for the PLDMOS and 16V/30GHz/53GHz for the isolated NLDMOS, respectively, reflect the excellent RF performance obtained.

引用

页码：162 / 165

页数：4

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