Effect of the p-n junction breakdown mechanism on the Er3+ ion electroluminescence intensity and excitation efficiency in Si:Er epitaxial layers grown through sublimation molecular beam epitaxy

被引：7

作者：

Shmagin, VB ^{[1
]}

Remizov, DY ^{[1
]}

Krasil'nik, ZF ^{[1
]}

Kuznetsov, VP ^{[1
]}

Shabanov, VN ^{[1
]}

Krasil'nikova, LV ^{[1
]}

Kryzhkov, DI ^{[1
]}

Drozdov, MN ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

来源：

PHYSICS OF THE SOLID STATE | 2004年 / 46卷 / 01期

关键词：

Spectroscopy; State Physics; Maximal Intensity; Molecular Beam Epitaxy; Molecular Beam;

D O I：

10.1134/1.1641934

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A series of Si : Er/Si light-emitting diode structures with a smoothly varying p-n junction breakdown mechanism, grown through sublimation molecular-beam epitaxy, is used to investigate the effect of the breakdown mechanism on the electroluminescence of the structures. The maximal intensity and excitation efficiency of room-temperature Er3+ ion electroluminescence are shown to be attained in diode structures with a mixed breakdown mechanism. (C) 2004 MAIK "Nauka / Interperiodica".

引用

页码：109 / 112

页数：4

共 11 条

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