Unusual tunneling characteristics of double-quantum-well heterostructures

被引：0

作者：

Lin, Y ^{[1
]}

Nitta, J ^{[1
]}

Newaz, AKM ^{[1
]}

Song, W ^{[1
]}

Mendez, EE ^{[1
]}

机构：

[1] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2005年 / 772卷

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report tunneling phenomena in double In0.53Ga0.47As quantum-well structures that are at odds with the conventional parallel-momentum-conserving picture of tunneling between two-dimensional systems. We found that the tunneling current was mostly determined by the correlation between the emitter and the state in one well, and not by that between those in both wells. Clear magnetic-field-dependent features were first observed before the main resonance, corresponding to tunneling channels into the Landau levels of the well near the emitter. These facts provide evidence of the violation of in-plane momentum conservation in two-dimensional systems.

引用

页码：549 / 550

页数：2

共 4 条

[1] TUNNELING BETWEEN TOTALLY QUANTIZED LEVELS IN GAAS/ALGAAS ASYMMETRIC TRIPLE-BARRIER HETEROSTRUCTURES IN HIGH MAGNETIC-FIELDS [J].

ASAHI, H ;

TEWORDT, M ;

SYME, RT ;

KELLY, MJ ;

LAW, VJ ;

MACE, DR ;

FROST, JEF ;

RITCHIE, DA ;

JONES, GAC ;

PEPPER, M .

APPLIED PHYSICS LETTERS, 1991, 59 (07) :803-805

[2] ELECTRON-TRANSPORT VIA RESONANTLY COUPLED ENERGY-LEVELS IN TRIPLE BARRIER STRUCTURE INVESTIGATED BY MAGNETOTUNNELING SPECTROSCOPY [J].

KURATA, H ;

SAKAKI, H .

SURFACE SCIENCE, 1994, 305 (1-3) :369-374

[3] Resonant tunneling is double-quantum-well triple-barrier heterostructures [J].

Macks, LD ;

Brown, SA ;

Clark, RG ;

Starrett, RP ;

Reed, MA ;

Deshpande, MR ;

Fernando, CJL ;

Frensley, WR .

PHYSICAL REVIEW B, 1996, 54 (07) :4857-4862

[4] Phonon bottleneck effects in an InGaAs/InAlAs triple barrier tunnelling diode at high magnetic fields [J].

Wirner, C ;

Awano, Y ;

Yokoyama, N ;

Ohno, M ;

Miura, N ;

Nakagawa, T ;

Bando, H .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (08) :998-1002

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