Carbon nanotube Schottky diode: an atomic perspective

被引：25

作者：

Bai, P. ^{[1
]}

Li, E. ^{[1
]}

Lam, K. T. ^{[2
]}

Kurniawan, O. ^{[1
]}

Koh, W. S. ^{[1
]}

机构：

[1] Inst High Performance Comp, Nanoelect Res Grp, Singapore 117528, Singapore

[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119077, Singapore

来源：

NANOTECHNOLOGY | 2008年 / 19卷 / 11期

关键词：

D O I：

10.1088/0957-4484/19/11/115203

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The electron transport properties of semiconducting carbon nanotube ( SCNT) Schottky diodes are investigated with atomic models using density functional theory and the non-equilibrium Green's function method. We model the SCNT Schottky diode as a SCNT embedded in the metal electrode, which resembles the experimental set-up. Our study reveals that the rectification behaviour of the diode is mainly due to the asymmetric electron transmission function distribution in the conduction and valence bands and can be improved by changing metal-SCNT contact geometries. The threshold voltage of the diode depends on the electron Schottky barrier height which can be tuned by altering the diameter of the SCNT. Contrary to the traditional perception, the metal-SCNT contact region exhibits better conductivity than the other parts of the diode.

引用

页数：6

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