Processing and Thermoelectric Performance Characterization of Thin-Film Devices Consisting of Electrodeposited Bismuth Telluride and Antimony Telluride Thin-Film Legs

被引：7

作者：

Kim, Min-Young ^{[1
]}

Oh, Tae-Sung ^{[1
]}

机构：

[1] Hongik Univ, Dept Mat Sci & Engn, Seoul 121791, South Korea

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2011年 / 40卷 / 05期

关键词：

Thermopile; thin film; Seebeck effect; electrodeposition; bismuth telluride; antimony telluride; BI2TE3; SB2TE3; DEPOSITION; SENSOR; MICROSTRUCTURES; SCATTERING;

D O I：

10.1007/s11664-011-1562-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thermopile thin-film devices were fabricated by successive electrodeposition of p-type Sb-Te and n-type Bi-Te films. The thermopile processed with 1-mu m-thick SiO2 as an insulating layer on the thin-film legs exhibited sensitivity of 57.5 mV/K, much larger than the 7.3 mV/K measured for a thermopile with an insulating layer of 6-mu m-thick photoresist. Sensitivity of 30.4 mV/K was obtained for a thermopile with a 1-mu m-thick SiN (x) insulating layer.

引用

页码：759 / 764

页数：6

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