Bipolar mechanisms present in short channel SOI-MOSFET transistors

被引：1
作者：
Janczyk, G [1 ]
机构：
[1] Warsaw Univ Technol, PL-00662 Warsaw, Poland
来源：
MICROELECTRONICS RELIABILITY | 2005年 / 45卷 / 7-8期
关键词：
D O I：
10.1016/j.microrel.2004.12.007
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The set of physical mechanisms present in the body of SOT MOS transistors has been presented. Selected bipolar aspects of physical phenomena usually oversimplified in existing SOT MOS models have been analyzed. The action of parasitic bipolar transistor present in the body of SOT MOS transistor is one of them and seems to become especially important as transistor channel dimensions are reduced. (c) 2004 Elsevier Ltd. All rights reserved.
引用
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页码：1257 / 1263
页数：7
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