A 6.5kV ESD-Protected Low Noise Amplifier in 65-nm CMOS

被引：0
作者：
Tsai, Ming-Hsien [1 ]
Hsueh, Fu-Lung [1 ]
Jou, Chewn-Pu [1 ]
Song, Ming-Hsiang [1 ]
Tseng, Jen-Chou [1 ]
Hsu, Shawn S. H. [2 ]
Chen, Sean [1 ]
机构：
[1] Taiwan Semicond Mfg Co, Hsinchu, Taiwan
[2] Natl Tsing Hua Univ, Hsinchu 30013, Taiwan
来源：
2010 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (MTT) | 2010年
关键词：
CMOS; ESD; RF; SCR; TLP; Low noise amplifier;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new ESD topology is proposed for RF low-noise amplifier (LNA). By using the modified silicon-controlled rectifier (MSCR) in conjunction with a P+/N-well diode clamp, a 5.8-GHz LNA with 6.5-kV ESD protection circuit is demonstrated by a 65-nm CMOS technology. Compared with the reference design, the new topology enhances the ESD level from 3.5 kV to 6.5 kV for human body model (HBM) while the noise figure (NF) is only 0.13 dB higher. Under a supply voltage of 1.2 V and drain current of 6.5 mA, the proposed ESD-protected LNA has a NF of 2.57 dB with an associated power gain of 16.7 dB. The input third-order intercept point (IIP3) is -11 dBm and the input and output return losses are below -15.9 dB and -20 dB, respectively.
引用
收藏
页码：485 / 488
页数：4
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